sot223 npn silicon planar medium power transistors issue 3 ? november 1995 j complementary types ? bsp43 - bsp33 BSP41 - bsp31 partmarking detail ? device type in full absolute maximum ratings. parameter symbol BSP41 bsp43 unit collector-base voltage v cbo 70 90 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a base current i b 100 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base bsp43 breakdown voltage BSP41 v (br)cbo 90 70 v i c =100 m a collector-emitter bsp43 breakdown voltage BSP41 v (br)ceo 80 60 vi c =10ma * emitter-base breakdown voltage v (br)ebo 5v i e =10 m a collector cut-off current i cbo 100 50 na m a v cb =60v v cb =60v, tamb =125c collector-emitter saturation voltage v ce(sat) 0.25 0.5 v v i c =150ma, i b =15ma i c =500ma, i b =50ma base-emitter saturation voltage v be(sat) 1.0 1.2 v v i c =150ma, i b =15ma i c =500ma, i b =50ma static forward current transfer ratio h fe 30 100 50 300 i c =100 m a, v ce =5v i c =100ma, v ce =5v i c =500ma, v ce =5v collector capacitance c c 12 pf v cb =10v, f=1mhz emitter capacitance c e 90 pf v eb =0.5v, f=1mhz transition frequency f t 100 mhz i c =50ma, v ce =10v f =35mhz turn-on time t on 250 ns v cc =20v, i c =100ma i b1 =i b2 =5ma turn-off time t off 1000 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt493 datasheet. BSP41 bsp43 c c e b 3 - 64
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